Prof. Manuel G. Velarde has received the UK PATENT CERTIFICATE (serial number GB 2533105) for the co-invention (with Prof. E. G. Wilson) of SFET (Solectron Field Effect Transistor and inverter) a novel transistor not based on silicon and offering extremely low heat as transport is mechanically controlled by solitons (wave-like localized mechanical excitations in a crystal). The theory underlying the invention started being developed while he was in office as CISM Rector in 2004.